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IRF9Z34NLPBF

Infineon Technologies
RoHS
/
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 55V 19A TO-262
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Buying Options
Total Price: USD $0.92
Unit Price: USD $0.9152
≥1 USD $0.9152
Inventory: 397
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 4.826mm
Length 10.67mm
Height 9.65mm

Technical

Nominal Vgs -4 V
Avalanche Energy Rating (Eas) 180 mJ
Pulsed Drain Current-Max (IDM) 68A
Drain to Source Breakdown Voltage -55V
Drain-source On Resistance-Max 0.1Ohm
Gate to Source Voltage (Vgs) 20V
Threshold Voltage -4V
Continuous Drain Current (ID) -19A
Turn-Off Delay Time 30 ns
Fall Time (Typ) 41 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 55V
Rise Time 55 ns
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 100m Ω @ 10A, 10V
Transistor Application SWITCHING
FET Type P-Channel
Turn On Delay Time 13 ns
Case Connection DRAIN
Power Dissipation 68W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.8W Ta 68W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) 30
Current Rating -19A
Peak Reflow Temperature (Cel) 260
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Voltage - Rated DC -55V
Subcategory Other Transistors
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series HEXFET?
Published 1997
Packaging Tube
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole

Alternative Model

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