IRF9530NL
RoHS
/
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 100V 14A TO-262
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 250 mJ
DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 56A
Drain-source On Resistance-Max 0.2Ohm
Drain Current-Max (Abs) (ID) 14A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 200m Ω @ 8.4A, 10V
Transistor Application SWITCHING
FET Type P-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.8W Ta 79W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSIP-T3
Reach Compliance Code unknown
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 1998
Packaging Tube
Operating Temperature -55°C~175°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Alternative Model
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