Dual Supply Voltage -100V
Pulsed Drain Current-Max (IDM) 27A
Drain to Source Breakdown Voltage -100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -6.8A
Turn-Off Delay Time 28 ns
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6.8A Tc
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 480m Ω @ 4A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 250
Technology MOSFET (Metal Oxide)
Max Power Dissipation 48W
Subcategory Other Transistors
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)