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IRF9410TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 7A 8-SOIC
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Buying Options
Total Price: USD $1.38
Unit Price: USD $1.3832
≥1 USD $1.3832
≥10 USD $1.13525
≥100 USD $1.09915
≥500 USD $1.064
≥1000 USD $1.02885
Inventory: 1113
Minimum: 1
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Technical Details

Compliance

Lead Free Contains Lead, Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 3.9878mm
Length 4.9784mm
Height 1.4986mm

Technical

Nominal Vgs 1 V
Avalanche Energy Rating (Eas) 70 mJ
Dual Supply Voltage 30V
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1V
Continuous Drain Current (ID) 7A
Turn-Off Delay Time 23 ns
Fall Time (Typ) 17 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 7.3 ns
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 30m Ω @ 7A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 7.3 ns
Power Dissipation 2.5W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta
Row Spacing 6.3 mm
Number of Elements 1
Current Rating 7A
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 30V
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Terminal Finish Matte Tin (Sn)
Resistance 30mOhm
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
JESD-609 Code e3
Series HEXFET?
Published 2004
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 12 Weeks

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