IRF9393PBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 30V 9.2A 8-SO
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Dimensions
Length 5mm
Technical
Pulsed Drain Current-Max (IDM) 75A
Drain to Source Breakdown Voltage -30V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 9.2A
Turn-Off Delay Time 55 ns
Fall Time (Typ) 49 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V 20V
Drain to Source Voltage (Vdss) 30V
Rise Time 44ns
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Current - Continuous Drain (Id) @ 25°C 9.2A Ta
Input Capacitance (Ciss) (Max) @ Vds 1110pF @ 25V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Rds On (Max) @ Id, Vgs 13.3m Ω @ 9.2A, 20V
Transistor Application SWITCHING
FET Type P-Channel
Turn On Delay Time 16 ns
Power Dissipation 2.5W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
Series HEXFET?
Published 2010
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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