Pulsed Drain Current-Max (IDM) 43A
Drain to Source Breakdown Voltage -30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -5.4A
Turn-Off Delay Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.4A Ta
Input Capacitance (Ciss) (Max) @ Vds 386pF @ 25V
Vgs(th) (Max) @ Id 2.4V @ 10μA
Rds On (Max) @ Id, Vgs 59m Ω @ 5.4A, 10V
Transistor Application SWITCHING
Turn On Delay Time 9.7 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ