IRF9332PBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 30V 9.8A 8SOIC
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Buying Options
Total Price: USD $0.14
Unit Price: USD $0.1387
≥1 USD $0.1387
≥10 USD $0.114
≥100 USD $0.1102
≥500 USD $0.1064
≥1000 USD $0.10355
Inventory: 1115
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Series HEXFET?
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17.5m Ω @ 9.8A, 10V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1270pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.8A Ta
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 47 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 58 ns
Turn-Off Delay Time 73 ns
Continuous Drain Current (ID) 9.8A
Threshold Voltage -1.9V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Recovery Time 54 ns
Nominal Vgs -1.9 V
Dimensions
Height 1.5mm
Length 5mm
Width 4mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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