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IRF8714TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 14A 8-SOIC
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Buying Options
Total Price: USD $0.62
Unit Price: USD $0.616
≥1 USD $0.616
≥10 USD $0.5324
≥100 USD $0.368368
≥500 USD $0.307789
≥1000 USD $0.26195
≥3000 USD $0.233297
Inventory: 14772
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 3.9878mm
Length 4.9784mm
Height 1.4986mm

Technical

Nominal Vgs 1.8 V
Avalanche Energy Rating (Eas) 65 mJ
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 11 ns
Fall Time (Typ) 5 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 9.9 ns
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 14A Ta
Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 15V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Rds On (Max) @ Id, Vgs 8.7m Ω @ 14A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 10 ns
Power Dissipation 2.5W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Resistance 8.7MOhm
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series HEXFET?
Published 2004
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin

Supply Chain

Factory Lead Time 12 Weeks

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