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IRF8707TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 11A 8-SOIC
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Buying Options
Total Price: USD $0.48
Unit Price: USD $0.4752
≥1 USD $0.4752
≥10 USD $0.4092
≥100 USD $0.28424
≥500 USD $0.221918
≥1000 USD $0.180382
≥3000 USD $0.161251
Inventory: 12127
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 3.9878mm
Length 4.9784mm
Height 1.75mm

Technical

Nominal Vgs 1.8 V
Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 53 mJ
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1.8V
Continuous Drain Current (ID) 11A
Turn-Off Delay Time 7.3 ns
Fall Time (Typ) 4.4 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Rise Time 7.9 ns
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 15V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Rds On (Max) @ Id, Vgs 11.9m Ω @ 11A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 6.7 ns
Power Dissipation 2.5W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta
Number of Channels 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Resistance 11.9MOhm
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Series HEXFET?
Published 2007
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 12 Weeks

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