IRF840PBF
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
PLANAR >= 100V
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Buying Options
Total Price: USD $1.64
Unit Price: USD $1.6368
≥1 USD $1.6368
≥10 USD $1.31736
≥100 USD $1.083896
≥500 USD $0.917154
≥1000 USD $0.778202
≥3000 USD $0.739288
Inventory: 1182
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Drain to Source Resistance 850mOhm
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 8A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 500V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 850mOhm @ 4.8A, 10V
FET Type N-Channel
Power Dissipation 125W
Power Dissipation-Max 125W Tc
Current Rating 8A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 500V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Series HEXFET?
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package TO-220AB
Package / Case TO-220-3
Mounting Type Through Hole
Alternative Model
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