Avalanche Energy Rating (Eas) 62 mJ
Pulsed Drain Current-Max (IDM) 110A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0073Ohm
Drain Current-Max (Abs) (ID) 14A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 60A
Turn-Off Delay Time 9.3 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 14A Ta 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 1430pF @ 15V
Vgs(th) (Max) @ Id 2.4V @ 25μA
Rds On (Max) @ Id, Vgs 7.3m Ω @ 14A, 10V
Transistor Application SWITCHING
Turn On Delay Time 7.8 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.2W Ta 42W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -40°C~150°C TJ