IRF8308MTRPBF
RoHS 
RoHS compliant
RoHS compliantPackage DirectFET? Isometric MX
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 27A MX
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Buying Options
Total Price: USD $1
Unit Price: USD $1.0032
≥1 USD $1.0032
Inventory: 1270
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Physical
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MX
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET?
JESD-609 Code e1
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.8W Ta 89W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 27A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4404pF @ 15V
Current - Continuous Drain (Id) @ 25°C 27A Ta 150A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 27A
Drain-source On Resistance-Max 0.0035Ohm
Pulsed Drain Current-Max (IDM) 212A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 12 mJ
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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