IRF8306MTR1PBF
RoHS
/
Package DirectFET? Isometric MX
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 23A DIRECTFET
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric MX
Number of Pins 7
Supplier Device Package DIRECTFET? MX
Technical
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.1W Ta 75W Tc
Element Configuration Single
Power Dissipation 2.1W
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.5mOhm @ 23A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 4110pF @ 15V
Current - Continuous Drain (Id) @ 25°C 23A Ta 140A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 4.5V
Rise Time 34ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 4.11nF
FET Feature Schottky Diode (Body)
Drain to Source Resistance 25mOhm
Rds On Max 2.5 mΩ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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