IRF8113GPBF
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
HEXFET? Tube Surface Mount N-Channel Mosfet Transistor 17.2A Ta 17.2A 2.5W 3.5ns
PDF
/
Buying Options
Total Price: USD $0.28
Unit Price: USD $0.27645
≥1 USD $0.27645
≥10 USD $0.22705
≥100 USD $0.2204
≥500 USD $0.2128
≥1000 USD $0.20615
Inventory: 3671
Minimum: 1
-
+
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Power Dissipation 2.5W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.6mOhm @ 17.2A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2910pF @ 15V
Current - Continuous Drain (Id) @ 25°C 17.2A Ta
Gate Charge (Qg) (Max) @ Vgs 36nC @ 4.5V
Rise Time 8.9ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.5 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 17.2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Input Capacitance 2.91nF
Drain to Source Resistance 7.4mOhm
Rds On Max 5.6 mΩ
Nominal Vgs 2.2 V
Dimensions
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Recommended For You
IRF8113GPBF+price,IRF8113GPBF+datasheet,IRF8113GPBF+in stock,buy+IRF8113GPBF,finder+IRF8113GPBF,IRF8113GPBF+tutorials,IRF8113GPBF+download