Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 90A
Turn-Off Delay Time 54 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Drain to Source Voltage (Vdss) 40V
Gate Charge (Qg) (Max) @ Vgs 212nC @ 10V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Input Capacitance (Ciss) (Max) @ Vds 6852pF @ 25V
Vgs(th) (Max) @ Id 3.9V @ 150μA
Rds On (Max) @ Id, Vgs 1.4m Ω @ 90A, 10V
Power Dissipation-Max 96W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series HEXFET?, StrongIRFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ