IRF7832TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 20A 8-SOIC
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Buying Options
Total Price: USD $0.48
Unit Price: USD $0.47974
≥1 USD $0.47974
≥10 USD $0.45259
≥100 USD $0.42697
≥500 USD $0.4028
≥1000 USD $0.38
≥3000 USD $0.35849
Inventory: 269865
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~155°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 4MOhm
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 20A
Number of Elements 1
Row Spacing 6.3 mm
Number of Channels 1
Power Dissipation-Max 2.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.32V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4310pF @ 15V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V
Rise Time 6.7 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 2.32V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 260 mJ
Recovery Time 62 ns
Max Junction Temperature (Tj) 155°C
Nominal Vgs 2.32 V
Dimensions
Height 1.75mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
Alternative Model
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