IRF7832TR
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 20A 8-SOIC
PDF
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Buying Options
Total Price: USD $0.48
Unit Price: USD $0.48355
≥1 USD $0.48355
≥10 USD $0.3971
≥100 USD $0.38475
≥500 USD $0.3724
≥1000 USD $0.36005
Inventory: 268458
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Technical
Packaging Cut Tape (CT)
Published 2005
Series HEXFET?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.32V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4310pF @ 15V
Current - Continuous Drain (Id) @ 25°C 20A Ta
Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.004Ohm
Pulsed Drain Current-Max (IDM) 160A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 260 mJ
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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