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IRF7811WTRPBF

Infineon Technologies
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 30V 14A 8-SOIC
PDF
/
Buying Options
Total Price: USD $0.15
Unit Price: USD $0.152
≥1 USD $0.152
≥10 USD $0.1254
≥100 USD $0.1216
≥500 USD $0.1178
≥1000 USD $0.11305
Inventory: 12501
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No

Dimensions

Width 3.9878mm
Length 4.9784mm
Height 1.4986mm

Technical

Rds On Max 12 mΩ
Drain to Source Resistance 12mOhm
Input Capacitance 2.335nF
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 29 ns
Fall Time (Typ) 9.9 ns
Vgs (Max) ±12V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Drain to Source Voltage (Vdss) 30V
Rise Time 11ns
Gate Charge (Qg) (Max) @ Vgs 33nC @ 5V
Current - Continuous Drain (Id) @ 25°C 14A Ta
Input Capacitance (Ciss) (Max) @ Vds 2335pF @ 16V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 12mOhm @ 15A, 4.5V
FET Type N-Channel
Turn On Delay Time 11 ns
Power Dissipation 1W
Power Dissipation-Max 3.1W Ta
Number of Elements 1
Current Rating 14A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 30V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2009
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Supplier Device Package 8-SO
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount

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