Drain to Source Resistance 12mOhm
Input Capacitance 2.335nF
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 29 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 33nC @ 5V
Current - Continuous Drain (Id) @ 25°C 14A Ta
Input Capacitance (Ciss) (Max) @ Vds 2335pF @ 16V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 12mOhm @ 15A, 4.5V
Power Dissipation-Max 3.1W Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ