IRF7811APBF
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 28V 11A 8-SOIC
PDF
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Buying Options
Total Price: USD $8.52
Unit Price: USD $8.5215
≥1 USD $8.5215
≥10 USD $6.992
≥100 USD $6.7735
≥500 USD $6.555
≥1000 USD $6.3365
Inventory: 1229
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Rds On Max 10 mΩ
Input Capacitance 1.76nF
Drain to Source Breakdown Voltage 28V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 11A
Vgs (Max) ±12V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Drain to Source Voltage (Vdss) 28V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Input Capacitance (Ciss) (Max) @ Vds 1760pF @ 15V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 10mOhm @ 11A, 10V
FET Type N-Channel
Power Dissipation 2.5W
Power Dissipation-Max 2.5W Ta
Number of Elements 1
Current Rating 11.4A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 28V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2008
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package 8-SO
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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