Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 13.3A
Turn-Off Delay Time 96 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Gate Charge (Qg) (Max) @ Vgs 62nC @ 5V
Current - Continuous Drain (Id) @ 25°C 13.3A Ta
Input Capacitance (Ciss) (Max) @ Vds 3780pF @ 16V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 9m Ω @ 15A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ