IRF7807VD2PBF
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 8.3A 8-SOIC
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Technical Details
Technical
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
FET Feature Schottky Diode (Isolated)
Drain to Source Resistance 25mOhm
Rds On Max 25 mΩ
Nominal Vgs 1 V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 1V
Continuous Drain Current (ID) 8.3A
Turn-Off Delay Time 1.1 ns
Fall Time (Typ) 2.2 ns
Forward Voltage 540mV
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Drain to Source Voltage (Vdss) 30V
Rise Time 1.2ns
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 8.3A Ta
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 4.5V
FET Type N-Channel
Forward Current 3.7A
Turn On Delay Time 6.3 ns
Power Dissipation 2.5W
Power Dissipation-Max 2.5W Ta
Number of Elements 1
Current Rating 8.3A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 30V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Resistance 25MOhm
Termination SMD/SMT
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series FETKY?
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ
Dimensions
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Physical
Supplier Device Package 8-SO
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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