IRF7807PBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 8.3A 8-SOIC
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Buying Options
Total Price: USD $0.55
Unit Price: USD $0.5529
≥1 USD $0.5529
≥10 USD $0.4541
≥100 USD $0.43985
≥500 USD $0.4256
≥1000 USD $0.41135
Inventory: 1211
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 66A
Drain-source On Resistance-Max 0.025Ohm
Drain Current-Max (Abs) (ID) 8.3A
JEDEC-95 Code MS-012AA
Vgs (Max) ±12V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Current - Continuous Drain (Id) @ 25°C 8.3A Ta
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 25m Ω @ 7A, 4.5V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Operating Temperature (Max) 150°C
JESD-30 Code R-PDSO-G8
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
Series HEXFET?
Published 2004
Packaging Tube
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Alternative Model
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