FET Feature Schottky Diode (Isolated)
Drain Current-Max (Abs) (ID) 8.3A
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Current - Continuous Drain (Id) @ 25°C 8.3A Ta
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 25m Ω @ 7A, 4.5V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ