IRF7807
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 8.3A 8-SOIC
PDF
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Buying Options
Total Price: USD $0.13
Unit Price: USD $0.131992
≥1 USD $0.131992
≥10 USD $0.114136
≥100 USD $0.106484
≥500 USD $0.096934
≥1000 USD $0.092682
≥1000 USD $0.0741
Inventory: 1167
Minimum: 1
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Technical Details
Physical
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.3A Ta
Gate Charge (Qg) (Max) @ Vgs 17nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±12V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 8.3A
Drain-source On Resistance-Max 0.025Ohm
Pulsed Drain Current-Max (IDM) 66A
DS Breakdown Voltage-Min 30V
Compliance
RoHS Status Non-RoHS Compliant
Alternative Model
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