Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 16A
Turn-Off Delay Time 14 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 16A Ta
Input Capacitance (Ciss) (Max) @ Vds 2080pF @ 15V
Vgs(th) (Max) @ Id 2.25V @ 250μA
Rds On (Max) @ Id, Vgs 6.8m Ω @ 16A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ