IRF7799L2TR1PBF
RoHS
/
Package DirectFET? Isometric L8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 250V 375A DIRECTFET
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 7.1mm
Length 9.144mm
Height 496μm
Technical
Nominal Vgs 4 V
Rds On Max 38 mΩ
Drain to Source Resistance 32mOhm
Recovery Time 198 ns
Input Capacitance 6.714nF
Drain to Source Breakdown Voltage 250V
Gate to Source Voltage (Vgs) 30V
Threshold Voltage 4V
Continuous Drain Current (ID) 6.6A
Turn-Off Delay Time 73.9 ns
Fall Time (Typ) 26.6 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 250V
Rise Time 33.5ns
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Current - Continuous Drain (Id) @ 25°C 375A Tc
Input Capacitance (Ciss) (Max) @ Vds 6714pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 38mOhm @ 21A, 10V
FET Type N-Channel
Turn On Delay Time 36.3 ns
Power Dissipation 125W
Element Configuration Single
Power Dissipation-Max 4.3W Ta 125W Tc
Number of Elements 1
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Resistance 38MOhm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2009
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Physical
Supplier Device Package DIRECTFET L8
Number of Pins 8
Package / Case DirectFET? Isometric L8
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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