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IRF7779L2TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package DirectFET? Isometric L8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 150V DIRECTFET L8
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Buying Options
Total Price: USD $5.51
Unit Price: USD $5.5088
≥1 USD $5.5088
≥10 USD $4.62616
≥100 USD $3.7422
≥500 USD $3.326382
≥1000 USD $2.848217
≥3000 USD $2.681906
Inventory: 1151
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 7.1mm
Length 9.144mm
Height 508μm

Technical

Avalanche Energy Rating (Eas) 270 mJ
Pulsed Drain Current-Max (IDM) 270A
Drain to Source Breakdown Voltage 150V
Drain Current-Max (Abs) (ID) 67A
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 4V
Continuous Drain Current (ID) 11A
Turn-Off Delay Time 36 ns
Fall Time (Typ) 12 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 19 ns
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Current - Continuous Drain (Id) @ 25°C 375A Tc
Input Capacitance (Ciss) (Max) @ Vds 6660pF @ 25V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 11m Ω @ 40A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 16 ns
Case Connection DRAIN
Power Dissipation 125W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.3W Ta 125W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-XBCC-N9
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
ECCN Code EAR99
Number of Terminations 9
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e1
Series HEXFET?
Published 2009
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 11
Package / Case DirectFET? Isometric L8
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 12 Weeks

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