IRF7769L2TR1PBF
RoHS
/
Package DirectFET? Isometric L8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 375A DIRECTFET
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric L8
Number of Pins 11
Supplier Device Package DIRECTFET L8
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3.5MOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 3.3W Ta 125W Tc
Element Configuration Single
Power Dissipation 125W
Turn On Delay Time 44 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5mOhm @ 74A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11560pF @ 25V
Current - Continuous Drain (Id) @ 25°C 375A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 32ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 92 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 2.7V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Input Capacitance 11.56nF
Drain to Source Resistance 2.8mOhm
Rds On Max 3.5 mΩ
Nominal Vgs 2.7 V
Dimensions
Height 508μm
Length 9.144mm
Width 7.1mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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