IRF7769L1TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage DirectFET? Isometric L8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 20A DIRECTFET
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Buying Options
Total Price: USD $3.22
Unit Price: USD $3.2224
≥1 USD $3.2224
≥10 USD $2.64385
≥100 USD $2.5612
≥500 USD $2.47855
≥1000 USD $2.3959
Inventory: 1191
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DirectFET? Isometric L8
Number of Pins 15
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
JESD-30 Code R-XBCC-N3
Number of Elements 1
Configuration Single
Power Dissipation-Max 3.3W Ta 125W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.3W
Case Connection DRAIN
Turn On Delay Time 44 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.5m Ω @ 74A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11560pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Ta 124A Tc
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 32ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 41 ns
Turn-Off Delay Time 92 ns
Continuous Drain Current (ID) 124A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 375A
Drain-source On Resistance-Max 0.0035Ohm
Pulsed Drain Current-Max (IDM) 500A
Avalanche Energy Rating (Eas) 260 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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