IRF7759L2TR1PBF
RoHS
/
Package DirectFET? Isometric L8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 75V 375A DIRECTFET
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 7.1mm
Length 9.144mm
Height 508μm
Technical
Nominal Vgs 3 V
Rds On Max 2.3 mΩ
Drain to Source Resistance 1.8mOhm
Recovery Time 96 ns
Input Capacitance 12.222nF
Drain to Source Breakdown Voltage 75V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 3V
Continuous Drain Current (ID) 26A
Turn-Off Delay Time 80 ns
Fall Time (Typ) 33 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 75V
Rise Time 37ns
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Current - Continuous Drain (Id) @ 25°C 26A Ta 375A Tc
Input Capacitance (Ciss) (Max) @ Vds 12222pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 2.3mOhm @ 96A, 10V
FET Type N-Channel
Turn On Delay Time 18 ns
Power Dissipation 125W
Element Configuration Single
Power Dissipation-Max 3.3W Ta 125W Tc
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 175°C
Resistance 2.3MOhm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2009
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ
Physical
Supplier Device Package DIRECTFET L8
Number of Pins 5
Package / Case DirectFET? Isometric L8
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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