Drain to Source Resistance 36mOhm
Input Capacitance 2.211nF
Drain to Source Breakdown Voltage -30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -7A
Turn-Off Delay Time 244 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Current - Continuous Drain (Id) @ 25°C 7A Ta
Input Capacitance (Ciss) (Max) @ Vds 2211pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 22mOhm @ 7A, 10V
Power Dissipation-Max 1.51W Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ