Pulsed Drain Current-Max (IDM) 29A
Drain to Source Breakdown Voltage -30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -3.6A
Turn-Off Delay Time 43 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.6A Ta
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 90m Ω @ 2.4A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.8W Ta
Technology MOSFET (Metal Oxide)
Additional Feature LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 2 (1 Year)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ