FET Feature Schottky Diode (Isolated)
Input Capacitance 1.066nF
Continuous Drain Current (ID) 4.3A
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 5V
Current - Continuous Drain (Id) @ 25°C 4.3A Ta
Input Capacitance (Ciss) (Max) @ Vds 1066pF @ 10V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Rds On (Max) @ Id, Vgs 55mOhm @ 4.3A, 4.5V
Power Dissipation-Max 1.25W Ta
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ