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IRF7526D1PBF

Infineon Technologies
RoHS
/
Package 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 2A MICRO8
PDF
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Buying Options
Total Price: USD $1.11
Unit Price: USD $1.10675
≥1 USD $1.10675
≥10 USD $0.9082
≥100 USD $0.8797
≥500 USD $0.8512
≥1000 USD $0.8227
Inventory: 97
Minimum: 1
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

FET Feature Schottky Diode (Isolated)
Drain to Source Breakdown Voltage -30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -2A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 200m Ω @ 1.2A, 10V
FET Type P-Channel
Power Dissipation 800mW
Power Dissipation-Max 1.25W Ta
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series FETKY?
Published 2005
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Number of Pins 8
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Mounting Type Surface Mount
Mount Surface Mount

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