IRF7521D1PBF
RoHS
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Package 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
20V FETKY - MOSFET AND SCHOTTKY DIODE IN A MICRO 8
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8
Supplier Device Package Micro8?
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series FETKY?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 1.3W Ta
Power Dissipation 1.25W
Turn On Delay Time 5.7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 135mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.4A Ta
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Rise Time 24ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 2.4A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Input Capacitance 260pF
FET Feature Schottky Diode (Isolated)
Drain to Source Resistance 135mOhm
Rds On Max 135 mΩ
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Alternative Model
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