Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1.3W Ta
Rds On (Max) @ Id, Vgs 135mOhm @ 1.7A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 15V
Current - Continuous Drain (Id) @ 25°C 2.4A Ta
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
Continuous Drain Current (ID) 2.4A
FET Feature Schottky Diode (Isolated)