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IRF7493TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 80V 9.3A 8-SOIC
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Buying Options
Total Price: USD $0.91
Unit Price: USD $0.91295
≥1 USD $0.91295
≥10 USD $0.74955
≥100 USD $0.7258
≥500 USD $0.703
≥1000 USD $0.67925
Inventory: 140816
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 15MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 80V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 9.3A
Number of Elements 1
Power Dissipation-Max 2.5W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 8.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.3A Tc
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Rise Time 7.5 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 9.3A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 74A
Dual Supply Voltage 80V
Recovery Time 56 ns
Nominal Vgs 4 V

Dimensions

Height 1.4986mm
Length 4.9784mm
Width 3.9878mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

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