IRF7493TR
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 80V 9.3A 8-SOIC
PDF
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Buying Options
Total Price: USD $0.91
Unit Price: USD $0.91295
≥1 USD $0.91295
≥10 USD $0.74955
≥100 USD $0.7258
≥500 USD $0.703
≥1000 USD $0.67925
Inventory: 130888
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series HEXFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 80V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 9.3A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 15m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9.3A Tc
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Rise Time 7.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 9.3A
JEDEC-95 Code MS-012AA
Drain-source On Resistance-Max 0.015Ohm
Drain to Source Breakdown Voltage 80V
Pulsed Drain Current-Max (IDM) 74A
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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