IRF7492PBF
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 200V 3.7A 8-SOIC
PDF
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Buying Options
Total Price: USD $0.67
Unit Price: USD $0.67165
≥1 USD $0.67165
≥10 USD $0.551
≥100 USD $0.5339
≥500 USD $0.5168
≥1000 USD $0.4997
Inventory: 1148
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 4.05mm
Length 4.9784mm
Height 1.4986mm
Technical
Nominal Vgs 2.5 V
Rds On Max 79 mΩ
Drain to Source Resistance 79mOhm
Recovery Time 100 ns
Input Capacitance 1.82nF
Dual Supply Voltage 200V
Drain to Source Breakdown Voltage 200V
Gate to Source Voltage (Vgs) 20V
Threshold Voltage 2.5V
Continuous Drain Current (ID) 3.7A
Turn-Off Delay Time 27 ns
Fall Time (Typ) 14 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 200V
Rise Time 13ns
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.7A Ta
Input Capacitance (Ciss) (Max) @ Vds 1820pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 79mOhm @ 2.2A, 10V
FET Type N-Channel
Turn On Delay Time 15 ns
Power Dissipation 2.5W
Power Dissipation-Max 2.5W Ta
Number of Elements 1
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2006
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package 8-SO
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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