IRF7490PBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 100V 5.4A 8-SOIC
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Buying Options
Total Price: USD $0.61
Unit Price: USD $0.60895
≥1 USD $0.60895
≥10 USD $0.4997
≥100 USD $0.48355
≥500 USD $0.46835
≥1000 USD $0.45315
Inventory: 5061
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 91 mJ
DS Breakdown Voltage-Min 100V
Pulsed Drain Current-Max (IDM) 43A
Drain-source On Resistance-Max 0.039Ohm
Drain Current-Max (Abs) (ID) 5.4A
JEDEC-95 Code MS-012AA
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5.4A Ta
Input Capacitance (Ciss) (Max) @ Vds 1720pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 39m Ω @ 3.2A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G8
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Terminal Finish Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
JESD-609 Code e3
Series HEXFET?
Published 2002
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Alternative Model
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