IRF7475PBF
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 12V 11A 8-SOIC
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Dimensions
Width 3.9878mm
Length 4.9784mm
Height 1.4986mm
Technical
Rds On Max 15 mΩ
Drain to Source Resistance 15mOhm
Input Capacitance 1.59nF
Drain to Source Breakdown Voltage 12V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 11A
Turn-Off Delay Time 13 ns
Fall Time (Typ) 7.5 ns
Vgs (Max) ±12V
Drive Voltage (Max Rds On,Min Rds On) 2.8V 4.5V
Drain to Source Voltage (Vdss) 12V
Rise Time 33ns
Gate Charge (Qg) (Max) @ Vgs 19nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 11A Ta
Input Capacitance (Ciss) (Max) @ Vds 1590pF @ 6V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 15mOhm @ 8.8A, 4.5V
FET Type N-Channel
Turn On Delay Time 7.5 ns
Power Dissipation 2.5W
Power Dissipation-Max 2.5W Ta
Number of Elements 1
Current Rating 11A
Technology MOSFET (Metal Oxide)
Voltage - Rated DC 12V
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Resistance 15MOhm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package 8-SO
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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