Pulsed Drain Current-Max (IDM) 55A
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.026Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 6.9A
Turn-Off Delay Time 29 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Current - Continuous Drain (Id) @ 25°C 6.9A Ta
Input Capacitance (Ciss) (Max) @ Vds 3180pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Rds On (Max) @ Id, Vgs 26m Ω @ 4.1A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Additional Feature ULTRA LOW RESISTANCE
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ