Pulsed Drain Current-Max (IDM) 75A
Drain to Source Breakdown Voltage 40V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 9.4A
Turn-Off Delay Time 20 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 9.4A Ta
Input Capacitance (Ciss) (Max) @ Vds 2460pF @ 20V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 15.5m Ω @ 9.4A, 10V
Transistor Application SWITCHING
Turn On Delay Time 7.6 ns
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ