Max Junction Temperature (Tj) 150°C
Avalanche Energy Rating (Eas) 200 mJ
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 15A
Turn-Off Delay Time 51 ns
Drive Voltage (Max Rds On,Min Rds On) 2.8V 10V
Gate Charge (Qg) (Max) @ Vgs 56nC @ 5V
Current - Continuous Drain (Id) @ 25°C 15A Ta
Input Capacitance (Ciss) (Max) @ Vds 3480pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 7.5m Ω @ 15A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ