IRF7451TRPBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 150V 3.6A 8SOIC
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Buying Options
Total Price: USD $1.15
Unit Price: USD $1.1528
≥1 USD $1.1528
≥10 USD $0.94072
≥100 USD $0.731632
≥500 USD $0.620171
≥1000 USD $0.50519
≥3000 USD $0.475578
Inventory: 1224
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 3.6A
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 990pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.6A Ta
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 4.2 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 17 ns
Continuous Drain Current (ID) 3.6A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.09Ohm
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 29A
Dimensions
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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