Subcategory FET General Purpose Power
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pulsed Drain Current-Max (IDM) 29A
Drain to Source Breakdown Voltage 150V
Drain-source On Resistance-Max 0.09Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 3.6A
Turn-Off Delay Time 17 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.6A Ta
Input Capacitance (Ciss) (Max) @ Vds 990pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Rds On (Max) @ Id, Vgs 90m Ω @ 2.2A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Technology MOSFET (Metal Oxide)