Avalanche Energy Rating (Eas) 230 mJ
Pulsed Drain Current-Max (IDM) 20A
Drain to Source Breakdown Voltage 200V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 2.5A
Turn-Off Delay Time 17 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.5A Ta
Input Capacitance (Ciss) (Max) @ Vds 940pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Rds On (Max) @ Id, Vgs 170m Ω @ 1.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta
Technology MOSFET (Metal Oxide)
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ