Drain to Source Resistance 24mOhm
Input Capacitance 1.877nF
Drain to Source Breakdown Voltage -12V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 8.9A
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 8.9A Ta
Input Capacitance (Ciss) (Max) @ Vds 1877pF @ 10V
Vgs(th) (Max) @ Id 900mV @ 250μA
Rds On (Max) @ Id, Vgs 24mOhm @ 8.7A, 4.5V
Power Dissipation-Max 2.5W Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ