IRF7421D1PBF
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 5.8A 8-SOIC
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Buying Options
Total Price: USD $15.23
Unit Price: USD $15.2285
≥1 USD $15.2285
≥10 USD $12.49535
≥100 USD $12.1049
≥500 USD $11.71445
≥1000 USD $11.324
Inventory: 1199
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Supplier Device Package 8-SO
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series FETKY?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 5.8A
Number of Elements 1
Power Dissipation-Max 2W Ta
Power Dissipation 2.5W
Turn On Delay Time 6.7 ns
Forward Current 4A
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5.8A Ta
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 27ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Forward Voltage 420mV
Fall Time (Typ) 16 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 5.8A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Input Capacitance 510pF
Max Forward Surge Current (Ifsm) 15A
FET Feature Schottky Diode (Isolated)
Drain to Source Resistance 60mOhm
Rds On Max 35 mΩ
Nominal Vgs 4 V
Dimensions
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
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