DS Breakdown Voltage-Min 12V
Pulsed Drain Current-Max (IDM) 46A
Drain-source On Resistance-Max 0.014Ohm
Drain Current-Max (Abs) (ID) 11.5A
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 11.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 3529pF @ 10V
Vgs(th) (Max) @ Id 900mV @ 250μA
Rds On (Max) @ Id, Vgs 14m Ω @ 11.5A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.5W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Additional Feature ULTRA LOW RESISTANCE
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ